摘要
目的:探讨采用低能量半导体激光血管内照射疗法(intravascular laser irradiation on blood,ILIB)治疗脑梗死的效果及机制。方法:随机选取80例脑梗死患者分为治疗组与对照组,两组各40例,两组患者接受同样的药物治疗,治疗组在上述治疗的基础上,于发病1d～3d内,加用半导体激光血管内照射治疗。采用国产半导体激光治疗仪,波长650nm,功率1.5mW～2.0mW。患者平卧,消毒后用静脉留置针穿刺上肢正中静脉或贵要静脉,成功后留置外套管,通过管脑导入激光剂,开启半导体激光治疗仪进行照射治疗。结果:治疗组有效率92.5%,与对照组差异有显著性意义(p<0.01),治疗组患者临床症状和体征治疗后明显改善。结论:该疗法有调节脂质代谢,改善血液流变学性质,恢复神经传导功能等功效,进而提高脑梗死的治疗效果。
Objective： To explore the result and mechanism of Low-energy Semiconductor Intravascular laser irradiation on blood to treatment brain Infarction. Methods： 80 brain Infarction patients were random allocation two groups.the patients groups accepting medicine curing and light upon the treatment with the afferent inside in laser in semiconductor; the controll groups only accepting medicine curing.Used semi-conductor laser instrument was the domestic, its wave-length 650 nms,l.5 the 2.0 mWs. Patients use after disinfecting the vein detain the needle wears to stab the arms exact center vein or expensive want the vein, detain after succeeding the coat take care of, passing to take care of the hrain duct into laser, open semi-conductor laser treatment instrument proceed project light upon the treatment. Results： The patients＇symptoms and signs were obviously improved in the treatment group ,their the effective rate （92.5%） was higher than that the control group （70%） （p〈 0.01）, Conslusions： The results suggest that the treatment can regulated lipid metabolism and improve the characteristics of hemorrheology and brain Infarction cure rate.
出处
《中国医学物理学杂志》
CSCD
2005年第6期720-721,共2页
Chinese Journal of Medical Physics
关键词
激光
血管内照射
脑梗死
Laser
Intravascular laser irradiation
Brain infarction
