摘要
采用热化学气相沉积法(CVD),以乙炔为碳源,在单晶硅上制备了定向碳纳米管薄膜。通过扫描电子显微镜(SEM)观察了碳管薄膜及衬底表面形貌。结果表明,以多孔硅为衬底生长的碳纳米管管径均匀且离散分布,定向性良好。生长前氨对催化剂膜的预处理具有刻蚀作用,可显著提高碳管的生长密度,从而获得碳纳米管阵列膜。
Carbon nanotubes films grown on single-crystal silicon by thermal chemical vapor deposition using acetylene gas as carbon source were prepared. The morphology of carbon nanotubes films and surface of substrates were examined by scanning electron microscope (SEM). The results show that carbon nanotubes grown on porous silicon substrate are well aligned with uniform diameter and dispersed distribution. Ammonia pretreatment to catalyst films is an etching process that increases the growth density of carbon nanotubes, and hence carbon nanotubes array films can be obtained.
出处
《南昌大学学报（理科版）》
CAS
北大核心
2005年第1期54-58,共5页
Journal of Nanchang University(Natural Science)
基金
国家自然科学基金资助项目(10275005)
