摘要
采用催化热解法,以二茂铁和二甲苯分别作为催化剂和碳源,在不同H2流量下,直接在硅基底上生长定向碳纳米管阵列。采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和拉曼光谱(Raman)对样品进行观察和表征,并研究了H2流量对定向碳纳米管生长的影响和碳纳米管定向生长的机理。结果表明:H2在反应过程中起刻蚀作用,H2流量为60cm3/min时,生长的碳纳米管定向性最好。
Well-aligned carbon nanotubes were directly synthesized in the silicon substrate by catalytic decomposition, in different H2 flow. In this experiment, xylene was used as the carbon source with ferrocene as the catalyst precursor. The products were characterized by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and Raman spectroscopy. The effect of different H2 flow on the growth of aligned carbon nanotubes and the growth mechanism of aligned carbon nanotubes were also studied. The results showed that H2 played a etching role in the process, the well-aligned carbon nanotubes have been obtained in the H2 flow 60cm^3/min.
出处
《化工新型材料》
CAS
CSCD
北大核心
2009年第9期86-88,共3页
New Chemical Materials
关键词
碳纳米管
定向生长
催化热解法
机理
carbon nanotube, well-align, catalytic decomposition, growth mechanism
