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LD泵浦被动调Q-Yb^(3+)∶YAG微晶片激光器的优化设计 被引量:6

Design and Optimization of LD-pumped Passively Q-switched Yb^(3+)∶YAG Microchip Laser
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摘要 从速率方程出发,理论分析了泵浦功率、输出镜反射率、Cr4+∶YAG的初始透过率和长度、Yb3+∶YAG的长度对调Q激光器的重复频率、脉冲宽度、平均输出功率、峰值功率、输出脉冲能量和单脉冲能量利用率的影响。依据理论结果设计了一个窄脉冲宽度、高峰值功率和脉冲能量的被动调Q-Yb3+∶YAG微晶片激光器。该激光器的脉冲宽度Δt=199 ps,峰值功率P m=1.04 MW,输出脉冲能量E=0.21 mJ。 Based on rate equations,effects of laser parameters,including the pumped power,the reflectance of output mirror,the initial transmittance and the length of Cr4 +∶ YAG,and the length of Yb3 +∶ YAG on the laser performance were analyzed theoretically.Then based on theoretical conclusions,we designed a LD-pumped and passively Q-switched Yb3 +∶ YAG microchip laser with narrow pulse width,high peak power and large pulse energy.The pulse width was 199 ps,the peak power was 1.04 MW,and the pulse energy was 0.21 mJ.
作者 刘宗华 郑义
出处 《发光学报》 EI CAS CSCD 北大核心 2013年第9期1219-1226,共8页 Chinese Journal of Luminescence
关键词 微晶片激光器 被动Q调制 Yb3+∶YAG Cr4+∶YAG 速率方程 microchip laser passively Q-switched Yb3 +∶YAG Cr4 +∶YAG rate equations
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