摘要
为适应半导体技术的快速发展,需要寻求一些新的等离子体源。介绍了两种比较新颖的等离子体源———表面波等离子体(SWP,surface wave plasma)和磁中性环路放电等离子体(NLD,mag-netic neutral loop discharge)。前者的设备没有磁场,且结构简单,工作温度低,易于大面积化;而后者的设备可以通过改变其中性环路直径方便地产生各种形状的等离子体,可用于高深宽比刻蚀,也可用于大面积刻蚀。与传统等离子体源相比,它们具有明显的优势,有望成为下一代等离子体源。
It is necessary to develop some new plasma sources to meet the development of semiconductor technology. Both plasma sources were introduced, which are surface wave plasma and magnetic neutral loop discharge plasma. Because there is no magnetic field in the surface wave plasma device, the device is simple, and it can work at a low temperature and generate large area plasma easily. The magnetic neutral loop discharge plasma device can conveniently generate various shapes of plasma by varying the diameter of the neutral loop. So it can be applied for both high aspect ratio etching and large area etching. Compared with the traditional plasma sources, they have many remarkable advantages and could become the next generation plasma sources.
出处
《微细加工技术》
EI
2006年第4期1-4,56,共5页
Microfabrication Technology
