Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300℃-1000℃ wi...Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300℃-1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃-1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge.The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO2 matrix.展开更多
TiO2-SiO2 thin films have been prepared on slide glass substrates by sol-gel method, and the effect of SiO2 additive on photo-generated hydrophilicity of TiO2 thin film was investigated by measuring the contact angle ...TiO2-SiO2 thin films have been prepared on slide glass substrates by sol-gel method, and the effect of SiO2 additive on photo-generated hydrophilicity of TiO2 thin film was investigated by measuring the contact angle of water, the microstructure, the transmittance, the photocatalytic activity and the specific surface area . The results showed that 10mol% of SiO2 additive was the most effective for decreasing contact angle of water. The SiO2 additive of less than 30mol% has a suppressive effect on the crystal growth of anatase in calcinations, resulting in a large surface area. Consequently, the super-hydrophilicity was improved.展开更多
基金This work was supported by Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences.
文摘Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300℃-1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃-1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge.The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO2 matrix.
基金Funded by Key Scientific and Technological Items of the Ministry of Education (No.99087) .
文摘TiO2-SiO2 thin films have been prepared on slide glass substrates by sol-gel method, and the effect of SiO2 additive on photo-generated hydrophilicity of TiO2 thin film was investigated by measuring the contact angle of water, the microstructure, the transmittance, the photocatalytic activity and the specific surface area . The results showed that 10mol% of SiO2 additive was the most effective for decreasing contact angle of water. The SiO2 additive of less than 30mol% has a suppressive effect on the crystal growth of anatase in calcinations, resulting in a large surface area. Consequently, the super-hydrophilicity was improved.
