摘要
用离子束溅射技术和热处理方法，制备出颗粒尺寸和镶嵌密度均可控制的高质量Ｇｅ－ＳｉＯ２纳米颗粒镶嵌薄膜。在室温下测量了不同粒度纳米锗颗粒镶嵌薄膜样品的吸收光谱，观测到在可见光区有较强的光吸收和吸收带边蓝移。研究表明：镶嵌在绝缘介质薄膜中的纳米锗颗粒的能带是量子化的，随着纳米锗粒子平均尺寸的减小，其吸收带隙增加，吸收带边蓝移的程度相应增大。用有效质量近似模型讨论了量子尺寸效应和介电限域效应对纳米锗颗粒电子结构的影响。
Nanocrystalline Ge SiO 2 thin films were successfully prepared by the ion beam sputtering technique followed by annealing. Optical absorption spectra of the Ge crystallites of size 3 to 9 nm in diameter, on the average, have been studied. In comparison with that of the bulk Ge crystals, the nanocrystalline Ge show a blue shift of energy and the optical band gap increases with decreasing of the particle size of the nanocrystallites. The effective mass approximation model based on the quantum size effect is suggested to discuss the observed optical experimental details with satisfaction but only qualitatively. An effect of the dielectric confinement of the Ge nanocrystallites on the optical absorption spectra was observed.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1997年第12期1693-1696,共4页
Acta Optica Sinica
关键词
光吸收谱
纳米锗颗粒
薄膜
量子尺寸效应
optical absorption spectra, nanocrystalline Ge SiO 2 thin films, the quantum size effect, the dielectric confinement effect.
