Purpose HPGe detectors can be used for both dark matter search and neutrinoless double beta decay experiments.However,signal amplitudes of these two experiments are quite different.This paper presents the development ...Purpose HPGe detectors can be used for both dark matter search and neutrinoless double beta decay experiments.However,signal amplitudes of these two experiments are quite different.This paper presents the development of a wide dynamic range CMOS preamplifier for HPGe detectors,which can also be used for low light level photon detection.Methods The structure of a dual-stage dual-gain amplifier was adopted to receive the signals with charges ranging from~0.01 fC to 500 fC.A novel“pre-reset”technique has been proposed to reduce the dead time ratio for large signals.A prototype chip was fabricated and tested.Results A minimum ENC of 43 electrons has been achieved for the high-gain channel at 77 K and the maximum charge of the input signal could be up to 500 fC for the low-gain channel,corresponding to a dynamic range above 90 dB.Conclusions The dual-gain structure of the preamplifier and the“pre-reset”method have been successfully verified,which can be used for HPGe detectors for dark matter and neutrino experiments in the future.展开更多
Integrated circuits of deep submicron(DSM) CMOS technology are advantageous in volume density, power consumption and thermal noise for multichannel particle detection systems,but there are challenges in the front-end ...Integrated circuits of deep submicron(DSM) CMOS technology are advantageous in volume density, power consumption and thermal noise for multichannel particle detection systems,but there are challenges in the front-end circuit design.In this paper,we present a 0.18μm CMOS front-end readout circuit for low noise CdZnTe detectors in tens of pF capacitance.Solutions to the noise and gate leak problems in DSM technologies are discussed in detail.A prototype chip was designed,with a charge sensitive preamplifier,a 4th order semi-Gaussian shaper and several output drivers.Test results show that the chip has an equivalent noise charge of 164 e,without connecting it to a detector,with an integral nonlinearity of<0.21%and differential nonlinearity of<3.75%.展开更多
基金supported in part by NSFC under Grant 11975140 and in part by the National Key Research and Development Project under Grant 2017YFA0402202.
文摘Purpose HPGe detectors can be used for both dark matter search and neutrinoless double beta decay experiments.However,signal amplitudes of these two experiments are quite different.This paper presents the development of a wide dynamic range CMOS preamplifier for HPGe detectors,which can also be used for low light level photon detection.Methods The structure of a dual-stage dual-gain amplifier was adopted to receive the signals with charges ranging from~0.01 fC to 500 fC.A novel“pre-reset”technique has been proposed to reduce the dead time ratio for large signals.A prototype chip was fabricated and tested.Results A minimum ENC of 43 electrons has been achieved for the high-gain channel at 77 K and the maximum charge of the input signal could be up to 500 fC for the low-gain channel,corresponding to a dynamic range above 90 dB.Conclusions The dual-gain structure of the preamplifier and the“pre-reset”method have been successfully verified,which can be used for HPGe detectors for dark matter and neutrino experiments in the future.
基金supported by the National Natural Science Foundation of China (No.61006021)
文摘Integrated circuits of deep submicron(DSM) CMOS technology are advantageous in volume density, power consumption and thermal noise for multichannel particle detection systems,but there are challenges in the front-end circuit design.In this paper,we present a 0.18μm CMOS front-end readout circuit for low noise CdZnTe detectors in tens of pF capacitance.Solutions to the noise and gate leak problems in DSM technologies are discussed in detail.A prototype chip was designed,with a charge sensitive preamplifier,a 4th order semi-Gaussian shaper and several output drivers.Test results show that the chip has an equivalent noise charge of 164 e,without connecting it to a detector,with an integral nonlinearity of<0.21%and differential nonlinearity of<3.75%.
