摘要
首先介绍了CMOS图像传感器工作的基本原理。以自研的超连续谱光源为干扰源搭建了实验装置,对CMOS器件在强光下的受干扰现象进行了实验研究。获得了不同功率密度水平下CMOS器件输出的光斑饱和图像。以入射到CMOS器件靶面的功率密度3.14×10-3W/cm2为例,对得到的图像数据进行了分析,得到了干扰效果图和像元灰度表,并对产生的原因作出了分析。
Firstly the principle of CMOS photodetectors is introduced, and some basic theories of supercontinuum are discussed. The experiment equipment is built with self-developed supercontiuum light source as interference source. The output power is about 3W and spectrum range is 600 ~ 1700 nm. Based on the supercontinuum light source, the high power interference experiment is carried out with CMOS detector as the imaging component. The saturation ima- ges are collected from CMOS under different laser power densities. The image data is analyzed and interference effect pictures are drawn. When the power density in the CMOS detector is 3.14 ×10^-3W/cm2 ,gray chart of single picture elements is achieved, and the result is discussed.
出处
《激光与红外》
CAS
CSCD
北大核心
2014年第4期374-377,共4页
Laser & Infrared
关键词
光电对抗
激光干扰
超连续谱光源
CMOS传感器
optoelectronic countermeasure
laser disturbance
supercontinuum source
CMOS detector
