The /-V-（T） characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, alm...The /-V-（T） characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, almost converge at one point in the first quadrant. The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material. This convergence point can be used to obtain the I-V characteristic curve at any temperature.展开更多
Quasi-classical trajectory （QCT） calculations have been performed to study the product polarization behaviours in the reaction O（3p） ＋ D2 （v = 0, j = 0） → OD ＋ D. By running trajectories on the 3A′ and 3A″p...Quasi-classical trajectory （QCT） calculations have been performed to study the product polarization behaviours in the reaction O（3p） ＋ D2 （v = 0, j = 0） → OD ＋ D. By running trajectories on the 3A′ and 3A″potential energy surfaces （PESs）, vector correlations such as the distributions of the polarization-dependent differential cross sections （PDDCSs）, the angular distributions of P（θr） and P（Фr） are presented. Isotope effect is discussed in this work by a comprehensive comparison with the reaction O（3p） ＋ H2 （v = 0, j = 0） → H ＋ H. Common characteristics as well as differences are discussed in product alignment and orientation for the two reactions. The isotope mass effect differs on the two potential energy surfaces： the isotope mass effect has stronger influence on P（θr） and PDDCSs of the 3A′ PES while the opposite on P（Фr） of the 3A′ potential energy surface.展开更多
MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis ...MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400-760nm at the incident angle of 70°. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24. eV at x=0 to 3.90 eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.展开更多
文摘The /-V-（T） characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, almost converge at one point in the first quadrant. The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material. This convergence point can be used to obtain the I-V characteristic curve at any temperature.
文摘Quasi-classical trajectory （QCT） calculations have been performed to study the product polarization behaviours in the reaction O（3p） ＋ D2 （v = 0, j = 0） → OD ＋ D. By running trajectories on the 3A′ and 3A″potential energy surfaces （PESs）, vector correlations such as the distributions of the polarization-dependent differential cross sections （PDDCSs）, the angular distributions of P（θr） and P（Фr） are presented. Isotope effect is discussed in this work by a comprehensive comparison with the reaction O（3p） ＋ H2 （v = 0, j = 0） → H ＋ H. Common characteristics as well as differences are discussed in product alignment and orientation for the two reactions. The isotope mass effect differs on the two potential energy surfaces： the isotope mass effect has stronger influence on P（θr） and PDDCSs of the 3A′ PES while the opposite on P（Фr） of the 3A′ potential energy surface.
文摘MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400-760nm at the incident angle of 70°. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24. eV at x=0 to 3.90 eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.
