摘要
用射频磁控溅射法在不同衬底上制备出了MgxZn1-xO薄膜。X射线衍射(XRD)和原子力显微镜(AFM)研究结果表明,薄膜为六角纤锌矿结构,具有(002)方向择优取向;随氧分压增加,(002)衍射峰的角度变大,表征薄膜表面粗糙程度的方均根粗糙度减小。室温光致发光谱中有多个紫外及可见光致发光峰,其中344nm发光峰应来源于近带边发射。室温透射谱表明薄膜在可见光区具有极高的透过率,薄膜的吸收边位于340nm附近,进而估算出MgxZn1-xO薄膜的带隙宽度为3.59eV,与光致发光结果一致。
High quality MgxZn1-xO films were prepared by radio frequency magnetron sputtering on different substrates. The structure and morphologies of the films were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that MgxZn1-xO films are hexagonal wurtzite structure, and they have a preferred orientation with the c axis perpendicular to the substrate. With the increasing of oxygen partial pressure, angle of (002) diffraction peak becomes larger and surface RMS of the films reduces. There are several UV and visible peaks in photoluminescence spectra, and 344 nm luminescence is originated from band gap emission. The films have high transmittance in visible region, and the absorption edge of the films locates at 340 nm. In addition, the band gap of MgxZn1-xO films are estimated as 3.59 eV.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2005年第1期11-14,共4页
Journal of Functional Materials and Devices
基金
教育部博士点基金项目(项目编号:20020422056)
