摘要
采用溶胶-凝胶法在玻璃衬底上制备ZnO薄膜,X射线衍射(XRD)结果表明:晶粒尺寸随退火温度的升高而增大,与原子力显微镜(AFM)分析薄膜表面形貌的结果相符;UV-Vis吸收谱线表明,在ZnO带边吸收的位置出现较强的吸收,并得到600℃退火处理的薄膜禁带宽度为3.23 eV;室温光致发光谱表明,所有薄膜均在386.5 nm处出现一个紫外发射峰,当退火温度升高时,深能级发射受到抑制.
Zinc oxide thin films were synthesized on glass substrates by means of sol-gel method.The X-ray diffraction（XRD） results show that the grain size increased with the increasing of annealing temperature,which was confirmed by the morphology by atomic force microscopy（AFM）.The UV-Vis results show that there is a stronger absorption on the near band edge of zinc oxide and the bandgap of the film at 600 ℃ by means of annealing treatment is 3.23 eV.Room-temperature photoluminescence（PL） results show that all films show UV emission peak at 386.5 nm,the deep level emission is restrained by the increase of annealing temperature.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2012年第1期122-125,共4页
Journal of Jilin University:Science Edition
基金
吉林省科技厅发展计划项目(批准号:201101103)
内蒙古自然科学基金(批准号:2010MS0105)
