摘要
报道了Si-SiGe-Si异质结双极晶体管的数字模拟结果。采用有限差分法解半导体器件的载流子输运方程,求出各点上的载流子浓度及其电位,由此可确定器件的直流特性。器件的发射区掺杂浓度为1.4×10^(17)cm^(-3),基区掺杂浓度为7×10^(18)cm^(-3),SiGe基区中Ge摩尔含量为0.31,模拟得到的最高电流增益为390。数字模拟得到的晶体管特性曲线与实验结果符合良好。
In this paper we report the results obtained from numerical simulation of Si-SiGe-Si heterojunction bipolar transistor. The carrier density and potential at each point can be obtained from numerical solution of the carrier transport equations with the finite-differ-ence method, and then DC characteristics of the device can be obtained. The doping density is 1. 4×1017 cm-3 in emitter area and 7 × 1018 cm-3 in base area. Ge Mole fraction in SiGe base is 0. 31. From simulation, the highest current gain is 390 and the characteristics curve agrees very well with published experimental results.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第4期300-305,共6页
Research & Progress of SSE
