摘要
基于傅里叶变换的瞬态激励法是一种模拟半导体器件交流特性的计算技术。本文详细介绍了这种方法的原理和具体使用方法，并且给出了用这种方法模拟Ｓｉ－ＳｉＧｅ－Ｓｉ异质结双极晶体管的结果。
Transient excitation of a device followed by fourier decomposition is a calculating technique for finding the AC behavior of a semiconductor device.In this paper,the principle of this technique is discussed in detail,and the using method of this technique is given.AC behavior of Si SiGe Si heterojunction bipolar transitor has been simulated by this technique.Some simulating results are introduced.
出处
《半导体情报》
1998年第3期39-42,共4页
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