摘要
木文主要通过观察加热的硅-玻璃系统在静电场下的电流-时间(I-t)曲线。及其与封接状态的对应关系,用耗尽层和电场力的概念描述了封接的物理过程,讨论了表面状况对封接的影响,建立了表面粗糙程度与封接电压、材料刚度等参数的制约关系式,给出了可靠封接的余件和完成封接的I-t曲线判据.
Bonding is one of the key process in senser fabrication. Through the observation of the current-time (I-t) curve of the heated silicon-glass system under electro-static field and its cor-respondance to the bonding state, the electrostatic sealing procedure is dipiched in terms of de-pletion layer and electronic force. The influence of different surface condition on bonding isdiscussed and the restrictive relation among the surface roughness, bonding voltage and materialrigidity is estsblished. The condition of reliable bonding and the criterion of the ending in I-tcurve are given as well.
