摘要
在一台自行研制的电子回旋共振 (ECR)刻蚀系统中用CF4、O2 气体实现了Si3 N4材料的微细图形刻蚀。获得了气体流量、气体混合比、微波功率等因素对刻蚀速率的影响。结果表明刻蚀速率在O2 含量为 0 %时最慢 ,然后随着气体混合比的增加而增大 ,当气体中O2 含量为 2 0 %时达到最大 ,然后随着气体混合比的增加而缓慢降低。保持气体混合比为 2 0 % ,刻蚀速率随气体流量增加而增大 ;同时 ,微波功率越大 ,刻蚀速率也越高。
A novel technique has been developed to achieve sub micron etching of silicon nitride films with the plasma of CF 4 and O 2 gas mixture generated by a lab made electron cyclotron resonance(ECR).Influence of various factors,including gas flow,ratios of the gases and microwave power,on etching rate was studied.The results show that O 2 concentration strongly affects the etching rate,which rises up steadily with the increase of O 2 percentage from 0 to 20%,peaking at the 20% and falling down slowly with the percentage increase of O 2 and that higher microwave power results in faster etching rate.
出处
《真空科学与技术》
CSCD
北大核心
2003年第6期425-428,共4页
Vacuum Science and Technology
