摘要
采用多角度椭圆偏振光谱测量，并结合一定的数值计算方法，首次同时精确测出了多种工艺条件下由快速热氧化法生长的超薄氧化层厚度与折射率，对该方法生长的氧化层厚度与氧化时间平方根的关系进行了研究并计算了氧化生长速率的温度激活能，同时也对薄氧化层折射率与氧化层厚度的关系进行了探讨．
Abstract For the first time using variable-angle ellipsometry measurement, we have determined synchronously the refractive index and thickness of very thin silicon oxides grown by 'Rapid-thermal-oxidation' (RTO) technique.The growth dynamics of rapid thermal oxidation. have been studied and the temperature activation energies for the oxidation growth rate have aslo been calculated.By the way,we have discussed the thickness dependence of refractive index for very thin oxides.
基金
国家自然科学基金
国家教委支持项目
