摘要
基于GaN HEMT提出了一种3.5 GHz频率的高效率混合EF类功率放大器。采用输出端并联谐振电感来补偿晶体管的输出电容,提高了混合EF类功放的工作频段,使其能在3.5 GHz频率下达到高效率。使用简单的微带传输线构成谐波控制和匹配网络,满足混合EF类功放基波、奇次谐波和偶次谐波的阻抗特征,同时完成与50Ω负载阻抗的匹配。测试结果显示,在3.3～3.8 GHz频段内,在1dB压缩点处输出功率达到40 dBm,漏极效率75%～79%,增益11.5～12.3 dB。
This paper proposes a high efficiency hybrid EF class power amplifier at 3.5 GHz based on GaN HEMT.The output parallel resonant inductor is used to compensate the output capacitance of the transistor,and the working frequency band of the hybrid EF power amplifier is improved,so that it can achieve high efficiency at 3.5 GHz.A simple micro-strip transmission line is used to form a harmonic control and matching network,which satisfies the impedance characteristics of the fundamental frequency,odd harmonics and even harmonics of the hybrid EF power amplifier,and simultaneously matches the 50Ωload impedance.The test results show that at 3.3-3.8 GHz band,the power reaches 40 dBm at the 1 dB power compression point,the drain efficiency is 75%-79%,and the gain is 11.5-12.3 dB.
作者
程知群
张志维
刘国华
孙昊
蔡勇
CHENG Zhi-qun;ZHANG Zhi-wei;LIU Guo-hua;SUN Hao;CAI Yong(Key Laboratory of RF Circuit and System,Ministry of Education,Hangzhou Dianzi University,Hangzhou 310018,China;Key Laboratory of Electronic Measurement Technology,Anhui Province,The 41 st Institute of CETC,Bengbu 233010,China;Key Laboratory of Nano-devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
出处
《微波学报》
CSCD
北大核心
2019年第2期34-37,共4页
Journal of Microwaves
基金
国家自然科学基金(61871169)
浙江省自然科学基金(LZ16F010001)
