摘要
本文结合半导体金属氧化物的电学特性,从气体分子与半导体金属氧化物气敏材料相互作用的角度出发,对其气敏机理作一概述。由于半导体金属氧化物气敏机理与氧存在密切相关,因而从表面吸附、催化氧化反应的角度研究气敏机理对研究反应机理、提高气敏性能、开发新型气敏材料和掺杂剂有着重要的意义。
Combining with the electrical characteristics, Gas-sensing mechanism of semiconductor metal oxide is summarized from the angle of interaction between gas molecule and sensing material. Since the Gas-sensing mechanism of semiconductor metal oxide is close related to the oxygen ,researching gas-sensing mechanism from the angle of catalystic oxidation is significant for revealing the reaction mechanism、improving gas-sensitive property and developing new material and dopant .
出处
《传感器世界》
2003年第8期14-18,共5页
Sensor World
