摘要
以氧化钴及钛酸钙作为添加剂对Mg Si Ti高频低介陶瓷系统进行离子掺杂,并运用扫描电镜和X射线衍射对钴、钙离子的改性机理以及两添加剂的最佳配比进行分析.研究表明:适量的钴离子作为晶粒抑制剂和矿化剂,减少了系统缺陷,使系统微观结构排列整齐、致密,显著地使损耗从11 3×10-4降低至0 15×10-4,同时使烧结温度降低了近40℃。适量的钙离子掺杂在保证了其他介电性能的前提下可以有效地优化系统介电常数和电容量温度性能.该瓷料特别适于制成片式多层陶瓷电容器用于航空、航天、国防军事等尖端技术领域.
By adding cobalt oxide and calcium titanate to the Mg-Si-Ti system, the effects of ion doping on the system and the way to improve the properties of the material are investigated. The scanning electron microscope and X-ray diffraction analyses indicate the mechanism and the optimum content of additives. Cobalt oxide, a kind of mineralizer, reduces free oxides to improve the bulk densities of the sintered bodies and lowers the sintering temperature of the ceramics, furthermore, acts as a grain inhibitor to reduce the dielectric loss of the system greatly (from 0.001 13 to 0.000 15). Proper quantities of calcium titanate can compensate the positive temperature coefficient of capacitance and optimize the dielectric properties of the system. Under high frequency the ceramic system has low dielectric coefficient, low dielectric loss, low temperature coefficient of capacitance and high volume resistivity. Multilayer ceramic capacitor made from this system can be widely used in aviation, space flight, national defense and military area.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
2003年第6期604-607,共4页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金资助项目 (50 1 72 0 3 5).
关键词
氧化钴
钛酸钙
离子掺杂
Cobalt compounds
Dielectric properties
Doping (additives)
Scanning electron microscopy
X ray diffraction analysis
