摘要
采用脉冲激光法 (PLD)在Si衬底上沉积Zn1 -xMgxO薄膜 .x射线衍射 (XRD)表明薄膜为c轴取向 ,(0 0 2 )峰的半高宽仅为 0 .2 11° ,且没有MgO的相偏析 .透射电子显微镜可以清楚看到Zn1 -xMgxO薄膜的c轴择优取向 .在选区电子衍射图中可以看到Zn1 -xMgxO结晶薄膜整齐的衍射斑点 .室温下对Zn1 -xMgxO薄膜进行了光致荧光光谱分析 ,发现其带边发射峰相对ZnO晶体有 0 .4eV的蓝移 ,带边发射峰与杂质发射峰的强度之比高达 15 9.Zn1 -xMgxO结晶薄膜质量良好 。
High quality Zn 1-x Mg x O thin film was grown on Si substrate by pulsed laser deposition (PLD). x ray diffraction patterns indicated that the film was c axis oriented, the full width at half maximum of (002) peak was only 0.211°, and no phase separation was observed. Transmission electron microscopy(TEM) verified the c axis orientation of the Zn 1-x Mg x O thin film. Regular diffraction spots can be observed by TEM. Photoluminescence spectrum was measured at room temperature. The near band energy emission peak of the Zn 1-x Mg x O thin film has a blue shift of 0.4 eV from that of ZnO, and the ratio of near band energy to the defect-level peak intensity was as large as 159. These results indicate that Zn 1-x Mg x O thin film can have potential applications in optoelectronic devices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第4期935-938,共4页
Acta Physica Sinica
基金
国家重点基础研究发展规划项目 (批准号 :G2 0 0 0 0 683 0 6)资助的课题~~
