摘要
用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO2:(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220—1100nm范围的透过率,得到的带隙宽度Egopt=4.645eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276—550nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.
The SnO2 ： （Cn, In） thin films are deposited on glass substrates by reaction evaporation. The photoluminecence（PL） of the films is researched. The films have amorphous structure. The transmittance is measured in the range 220--1100 nm. The width of optical band gap is Eg^cpt = 4. 645 eV. At room temperature, the photoluminescence is measured at different wavelengths, and continuous spectrum of photoluminescence is obtained in the range of 276--550 nm. Especially,the density distributing in band tail states is determined by analyzing the emission spectrum.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第9期5823-5827,共5页
Acta Physica Sinica
基金
泉州市科技计划项目(批准号:Z2001009)资助的课题~~
