摘要
报道在Monte Carlo方法模拟多元氧化物薄膜生长的三维模型及模拟算法的基础上,模拟同质ABO3型薄膜外延的生长.引入粒子的沉积能量范围在0～2eV(假设沉积粒子所带能量较低,为了避免沉积粒子与基底表面作用产生再次碰撞,使能量损失,使模拟的误差过大).模拟模型采用周期型边界条件,只考虑沉积过程和扩散过程.引入了沉积能量参数,研究了薄膜生长初期岛的形貌,数量和尺寸的变化;以及对薄膜的生长模式和形貌变化的影响.模拟的结果表明在0.2ML(ML表示单层monolayer)覆盖度,0.05ML/S沉积速率,800K沉积温度下,随着粒子沉积能量的加大,在薄膜初期岛的形成中,岛的数量减少,尺寸加大.在0.6ML覆盖度,0.01ML/S沉积速率,800K沉积温度下,薄膜的生长模式更趋向于层状生长.
According to the developed three dimensional model and related algorithm for the simulation of multi-element oxide thin film to simulate homoepitaxial ABO_3 type thin film. The energy range of deposition is from 0 to 2eV. The periodic condition is used and two processes are considered:the crystal unit cell deposition and diffusion. The deposition energy are considered as parameter of the thin film, the effect of the initial stage morphology of the thin film. From the simulation results, it can be obtained t...
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第S1期127-130,共4页
Journal of Sichuan University(Natural Science Edition)
基金
国家安全973计划项目(Z0601)
