摘要
研究了不同含氮量的类金刚石薄膜 (DLC∶N)的导电性能 ,发现随着氮含量的增加 ,薄膜的电导率增加较缓 ,当氮含量达到一定值 (12 .8at % )后 ,薄膜电导率反而随氮含量的继续增加而下降。将薄膜在 30 0℃下退火 30min ,结果表明低掺氮的薄膜退火后导电性能有了较大的提高 ,而高掺氮的薄膜退火后电导率有所下降。Raman和XPS光谱研究表明 ,当薄膜中的氮含量达到一定值后 ,在薄膜中会出现非导电 (a CNx)的成分 ,因此高掺杂的类金刚石薄膜的电导率下降。FTIR光谱表明 ,充当施主杂质中心的氮原子在薄膜退火过程中存在被“激活”的现象 ,从而提高了电导率。因此氮对高掺杂和低掺杂薄膜导电性能的影响是不同的。
Electrical conductivity of nitride carbon (DLC∶N) films is investigated. The experiment results show that the electrical conductivity of the deposited films increases slowly with the increase of nitrogen content, while it will decrease when the nitrogen content in the film reaches a certain value of 12.8 at %. Thermal treatment results show the electrical conductivity of the lowly nitrogen doped DLC film increases rapidly, while that of the heavily doped film decreases after annealing at 300 ℃ for 30 min. Raman and XPS spectra results show that when the nitrogen content in the films reaches a certain value, there will appear nonconductive phases, which makes the electrical conductivity of the heavily doped films decrease. FTIR spectra analysis results show that the nitrogen atom as an impurity center has an 'activation' process during the thermal treatment, which leads to the increase of the electrical conductivity. Therefore the nitrogen in these two kinds of films has different effects on the electrical conductivity.
出处
《半导体光电》
CAS
CSCD
北大核心
2003年第1期41-44,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目(60072033)
