摘要
碳化硅MOSFET因其材料特性被广泛应用于新能源汽车的高压、高频和高功率密度场合。在考虑双面水冷散热过程,往往忽略芯片布局间距对于散热以及芯片温度均匀性的影响,未考虑芯片温度均匀性对于多芯片并联电流均匀性的影响。针对上述问题,设计一种双面水冷的封装结构,分析不同芯片布局间距对芯片温度均匀性的影响,分析不同结温及不同芯片布局对寄生参数及开关特性的影响,并针对不同芯片布局间距和不同液冷工况,采用大量仿真及响应面对比分析,验证了所提方法的有效性,为SiC功率模块封装对芯片温度均匀性及开关特性的影响提供技术方法指导和定量分析。
Silicon carbide(SiC)MOSFETs are widely used in high-voltage,high-frequency and high-power-density applications for new energy electric vehicles owing to their superior material properties.During the process of double-sided cooling,the effect of chip layout spacing on heat dissipation and chip temperature uniformity was usually ignored,and the effect of chip temperature uniformity on the parallel current uniformity of multiple chips was not taken into account.A double-sided cooling package structure was designed,the effect on chip temperature uniformity due to chip layout spacing was analyzed,and the influences of different junction temperatures and different chip layouts on parasitic parameters and switching characteristics were also discussed.Aimed at different chip layout spacings and different cooling conditions,the effectiveness of the proposed method was verified through a large number of simulations and the response face analysis and comparison,providing technical method guidance and quantitative analysis for the influences of SiC power module packaging on chip temperature uniformity and switching characteristics.
作者
廖淑华
周锦源
李敏
雷光寅
LIAO Shuhua;ZHOU Jinyuan;LI Min;LEI Guangyin(Institute of Future Lighting,Academy for Engineering&Technology,Fudan University,Shanghai 200433,China;Research Institute of Fudan University in Ningbo,Ningbo 315327,China;China Automotive Innovation Corporation,Nanjing 211113,China)
出处
《电源学报》
CSCD
北大核心
2024年第3期100-110,共11页
Journal of Power Supply
关键词
SiC双面水冷模块
芯片布局
温度均匀性
开关特性
SiC double-sided cooling module
chip layout
temperature uniformity
switching characteristics
