摘要
针对Matlab/PSB中MOSFET的理想开关模型的不足,提出了一种以功率MOSFET输出特性曲线为核心建立其特性模型的方法。该模型不但能精确模拟稳态的各种特性,也能够描述开关瞬态的过程。将模型应用于固态开关的仿真中,仿真结果与实验波形证明了该模型的正确性与准确性。
Based on deficiencies of MOSFET ideal switch in Matlab/PSB,a new MOSFET characteristics model is developed at the core of MOSFET output characteristic curve.The model can accurately simulate various of characteristics in steady state and switching instantaneous behaviour. When the model applied to Solid-State Switch simulation,the comparison between the experimental and simulation result proved the validity and accuracy of the model.
出处
《电力电子技术》
CSCD
北大核心
2005年第3期23-25,共3页
Power Electronics
基金
航空科学基金项目(03F52032)~~
