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IGBT的SPICE模拟 被引量:3

SPICE Simulation of IGBI's
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摘要 本文提出一种用SPICE程序对IGBT进行模拟的方法。这种方法具有简单、实用等优点。通过对实际IGBT的特性曲线的模拟和对IGBT的关断特性的分析,证明了这种方法是可行的。 A technique to simulate IGBT's with SPICE program is proposed in the paper.It is both simple and practical. This method has ben proved to be feasible through simulatfon of an actual IGBT's characteristic curves and analysis ofthe IGBT turn-off characteristics.
出处 《微电子学》 CAS CSCD 1994年第2期29-32,共4页 Microelectronics
关键词 IGBT SPICE模拟 功率器件 IGBT .SPICE simulation.Power device
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参考文献1

  • 1陈治明主编..电力电子器件基础[M].北京:机械工业出版社,1992:224.

同被引文献9

  • 1严杰,王莉,王志强.基于Matlab的功率MOSFET建模[J].电力电子技术,2005,39(3):23-25. 被引量:6
  • 2I.auritzen P O, Andersen G K, Helsper M. A basic IGBT model with easy parameter [ C ]// Power Electronics Specialists Conference. Vancouver, BC , Canada: IEEE, 2001: 2160-2165. 被引量:1
  • 3Brown Jess. Modeling the swftching performance of a MOSFET in the high side of a non isolated buck converter [J]. IEEE Transactions on Power Electronics, 2006,21(1 ) : 3-10. 被引量:1
  • 4Claudio A, Cotorogea M, Rodriguz M A. Parameter extraction for physics-based IGBT models by electrical measurement[C]//Power Electronics Specialists Conference, 2002. USA, IEEE, 2002, 1295-1300. 被引量:1
  • 5Xiong Yali, Sun Shan, Wei hong, et al. New physical insights on power MOSFET switching losses[J]. IEEE Transactions on Power Electronics, 2009, 24(2):525-531. 被引量:1
  • 6Deng Yi, Zhao Zhengming,Yuan Liqiang. IGBT modeling for analysis of complicated muhi-IGBT circuits [C]//2009 2nd International Conference on Power Electronics and Intelligent Transportation System. Shenzhen, China:IEEE, 2009:137- 140. 被引量:1
  • 7Kuang Sheng, Finney S J, Williams B W. A new analytical IGBT model with improved electrical characteristics[J]. IEEE Transactions on Power Electronics, 1999,14(1):98- 107. 被引量:1
  • 8Chindris G, Pop O, Aiin G, et ag. New PSpice model for power MOSFET devices[C]//IEEE 24th International Spring Seminar on Electronics Technology. Calimanesti-Caciulata, Romania= IEEE, 2001:158-162. 被引量:1
  • 9Jia J. An improved power MOSFET macro model for SPICE simulation[C]//IEE Colloquium on CAD of Power Electronic Circuits. London , UK = IEEE, 2002: 3/1-3/8. 被引量:1

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