摘要
在常压无催化条件下,采用化学气相沉积(Chemical Vapor Deposition,CVD)方法,直接生长二维α-硒化铟(In_(2)Se_(3))纳米片材料。研究了生长温度、生长时间和气体流量对In_(2)Se_(3)纳米片的微观形貌和尺寸的影响,采用扫描电子显微镜、X射线衍射仪、拉曼光谱仪对In_(2)Se_(3)纳米材料的分布、形貌、结构进行了表征和分析。实验结果表明,CVD法直接生长的In_(2)Se_(3)纳米片为规则的六边形,分布较均匀,沿(006)晶面择优生长,具有2H-α相的晶体结构。最佳工艺参数为硒粉区域温度为430℃,氧化铟粉末区域温度为800℃,生长时间为45 min,H_(2)流量为45 sccm,Ar流量为15 sccm。
Two-dimensionalα-indium selenide(In_(2)Se_(3))nanosheet materials are directly grown by chemical vapor deposition(CVD)under atmospheric pressure and catalyst-free conditions.The effects of growth temperature,growth time and gas flow rate on the microscopic morphology and size of In_(2)Se_(3)nanosheets are investigated,and the distribution,morphology and structure of In_(2)Se_(3)nanomaterials are analyzed by scanning electron microscopy,X-ray diffraction and Raman spectroscopy.The In_(2)Se_(3)nanosheets directly grown by CVD are regular hexagonal in shape with a more uniform distribution,and grew along the(006)crystal plane selectively with 2H-αphase crystal structure.The optimal process parameters are 430℃for the selenium powder region,800℃for the indium oxide powder region,45 min growth time,45 sccm H_(2) flow rate,and 15 sccm Ar flow rate.
作者
苗瑞霞
杨奔
王业飞
李田甜
MIAO Ruixia;YANG Ben;WANG Yefei;LI Tiantian(School of Electronic Engineering,Xi’an University of Posts and Telecommunications,Xi’an 710121,China)
出处
《西安邮电大学学报》
2023年第4期44-50,共7页
Journal of Xi’an University of Posts and Telecommunications
基金
国家自然科学基金项目(51302215,62105260)。
关键词
硒化铟
纳米片
扫描电子显微镜
无催化反应
化学气相沉积
表面形貌
In_(2)Se_(3)
nanosheets
scanning electron microscope
non-catalytic reaction
chemical vapor deposition
surface appearance
