摘要
氧化钨薄膜的结晶性对于其电致变色、紫外光电效应等特性影响显著.本文研究了射频磁控溅射制备氧化钨薄膜的实验参数对薄膜结晶性的影响.结果发现,升高衬底温度至265℃以上或室温下降低沉积气压至0.5Pa都可以获得含有结晶态的氧化钨薄膜,但前者为(001)择优取向,后者为(111)择优取向,而室温下当沉积气压在1Pa以上时则不能得到择优生长的氧化钨薄膜.此外,我们还发现氩氧流量比对薄膜的结晶性也有影响.这些结果可以为调控射频磁控溅射制备氧化钨薄膜的结晶性提供参考.
The electrochromic or ultra-violet opto-electric properties of the tungsten oxide films are highly related to their crystallinity.We prepared tungsten oxide films by the radio-frequency(RF)magnetron sputtering,and studied the influence of the experimental parameter on the crystallinity of the films.It is found that,the tungsten oxide films containing crystalline phases can be obtained by either increasing the substrate temperature up to higher than 265,or decreasing the ambient gas pressure down to 0.5Pa,with the preferred orientation of(001)for the former and(111)for the latter.The oriented tungsten oxide film can not be obtained at room temperature when the ambient gas pressure is higher than 1Pa.Besides,we also found an influence of the Ar/O_(2)ratio on the crystallinity of the films.The results should be helpful to control the crystallinity of the RF magnetron sputtered tungsten oxide films.
作者
陆文琪
高可心
LU Wen-qi;GAO Ke-xin(School of Physics,Dalian University of Technology,Dalian 116024,China)
出处
《青海师范大学学报（自然科学版）》
2023年第2期18-21,28,共5页
Journal of Qinghai Normal University(Natural Science Edition)
基金
中等尺寸交叉磁场微波等离子体源实验研究(11975070)
关键词
氧化钨薄膜
射频磁控溅射
结晶性
tungsten oxide thin film
radio-frequency magnetron sputtering
crystallinity
