摘要
高质量Nb/Al-AlO x/Nb三层膜制备是基于超导-绝缘-超导型(SIS)约瑟夫森结的量子电压标准芯片和超导量子干涉器件的关键工艺。针对远程靶基距直流磁控溅射工艺条件,研究溅射气氛和溅射功率对Nb、Nb/Al薄膜结构、形貌和电学性质的影响。Ar气流量20 mL/min,0.53 Pa,600 W制备的Nb膜的应力接近零压力,粗糙度仅为1.05 nm,超导转变温度9.2 K,剩余电阻比达到5.33。0.53 Pa,450 W制备的150 nm Nb上10 nm Al膜粗糙度仅为1.51 nm,完全覆盖底层Nb膜。以此条件制备的Nb/Al-AlO x/Nb SIS结能隙电压达到2.6 mV,表明远程溅射可以实现SIS结工艺所需高质量三层膜。
The fabrication of high-quality Nb/Al-AlO x/Nb trilayer films is crucial for quantum voltage standard chips and superconducting quantum interference devices based on superconductor-insulator-superconductor(SIS)type Josephson junctions.The effects of sputtering atmosphere and sputtering power on the structure,morphology and electrical properties of Nb and Nb/Al films are investigated for remote target-based distance DC magnetron sputtering process.The Nb film prepared with a Ar flow rate of 20 mL/min,0.53 Pa,and 600 W shows a stress close to zero pressure,a roughness of only 1.05 nm,a superconducting transition temperature of 9.2 K,and a residual resistance ratio of 5.33.The roughness of the 10 nm Al film on 150 nm Nb prepared at 0.53 Pa,450 W is only 1.51 nm and completely covers the underlying Nb film.The energy gap voltage of the Nb/Al-AlO x/Nb SIS junction prepared by these conditions reaches 2.6 mV,indicating that remote sputtering process can achieve high-quality trilayer films required for the SIS junction process.
作者
王振宇
曾九孙
高鹤
王仕建
徐达
钟青
李劲劲
王雪深
WANG Zhen-yu;ZENG Jiu-sun;GAO He;WANG Shi-jian;XU Da;ZHONG Qing;LI Jin-jin;WANG Xue-shen(College of Metrology and Measurement Engineering,China Jiliang University,Hangzhou,Zhejiang 310018,China;National Institute of Metrology,Beijing 102200,China)
出处
《计量学报》
CSCD
北大核心
2023年第9期1333-1338,共6页
Acta Metrologica Sinica
基金
国家自然科学基金青年科学基金(62101522)
国家市场监督管理总局科技计划(2021MK154)。
