摘要
在传统的CIGS薄膜太阳能电池中,CdS薄膜通常起到缓冲层的作用,但Cd有毒且不环保。无镉缓冲层的研究对于提高CIGS电池的环保性具有重要的现实意义。本工作采用射频反应磁控溅射制备Zn(O,S)薄膜,并研究了薄膜的成分、表面形貌、光学带隙与溅射气氛中氧含量之间的关系。将Ar/O_(2)流量从0.5 sccm增加到8 sccm时,薄膜中的S含量从82%降低到13%。随着溅射气氛中O含量的增加,Zn(O,S)薄膜的O1s结合能从O-Ⅲ(~532 eV)逐渐向O-Ⅰ(~530 eV)移动,薄膜中的S含量逐渐降低的同时出现了S^(6+)和S^(4+)。表面形貌表征表明Zn(O,S)可以在CIGS吸收层表面形成致密覆盖。光学带隙具有弯曲特性且在3.07~3.52 eV可调,在S/(O+S)比为56%时获得了3.07 eV的最小光学带隙值。以溅射法Zn(O,S)作为缓冲层制备的CIGS太阳能电池的转换效率为10.19%,且对光浴处理不敏感。溅射制备的Zn(O,S)薄膜促进了CIGS太阳能电池的工业化应用。
In aconventional CuIn_(1-x)Ga_(x)Se_(2)(CIGS)thin-film solar cell,CdS film usually plays the role of buffer layer,but Cd is toxic and environmentally harmful.The research on Cd-free buffer layers has a great practical significance for improving the environmental friendliness of CIGS solar cells.In this work,Zn(O,S)thin films were prepared by RF reactive magnetron sputtering.The relationship between the composition,surface morphology,optical band gap and the oxygen content in sputtering atmosphere was studied.The S content in the film decreased from 82%to 13%by increasing Ar/O_(2)flux from 0.5 to 8 sccm.By increasing O content in the sputtering atmosphere,binding energy of O1s shifted from O-Ⅱ(~531 eV)to O-Ⅰ(~530 eV),and the S 6+and S 4+ions appeared while the S content was decreased in the film.Surface morphology characterization revealed that Zn(O,S)covered the surface of CIGS absorber densely.Optical band gap(Eg)was adjustable from 3.07 eV to 3.52 eV with a bowing characteristic,the minimum Eg of 3.07 eV was obtained with S/(O+S)ratio at 56%.The power conversion efficiency of 10.19%was achieved in CIGS solar cell with sputtered Zn(O,S)as the buffer layer,which was insensitive to light soaking treatment.The Zn(O,S)film prepared by sputtering can promote the industrial application of CIGS solar cells.
作者
黄星烨
韩钰
赵笑昆
陈静允
范子超
孙祺
林舒平
钟大龙
温思同
李博研
HUANG Xingye;HAN Yu;ZHAO Xiaokun;CHEN Jingyun;FAN Zichao;SUN Qi;LIN Shuping;ZHONG Dalong;WEN Sitong;LI Boyan(National Institute of Clean-and-Low-Carbon Energy,Beijing 102211,China;Beijing Engineering Research Center of Nano-structured Thin Film Solar Cell,Beijing 102211,China;China Longyuan Power Group Corporation Limited,Beijing 100034,China)
出处
《材料导报》
CSCD
北大核心
2023年第S01期32-36,共5页
Materials Reports
基金
龙源电力集团股份有限公司科技创新项目计划(LYH⁃2021⁃23)
