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Co、Sm共掺杂PZN-PZT压电陶瓷的低温烧结与电性能研究

Low Temperature Sintering and Electrical Properties of Co、Sm Co-doped PZN-PZT Piezoelectric Ceramics
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摘要 试验采用传统固相法,成功制备出Co、Sm共掺杂的Pb_(0.95)Ba_(0.05)(Zn_(1/3)Nb_(2/3))_(0.2)(Zr_(0.52)Ti_(0.48))_(0.8)O_(3)+0.6mol%Co_(2)O_(3)+0.04mol%Sm_(2)O_(3)三元系压电陶瓷。研究分析了不同烧成温度下PZN-PZT压电陶瓷材料的压电性能、介电性能、相组成及其微观结构。结果显示,Co、Sm共掺杂不仅改善了PZN-PZT的压电、介电综合性能:d_(33)=301 pC/N,K_(p)=0.72,ε_(r)=1486.46,tanδ=0.11%,Q_(m)=515,而且将材料的烧成温度降低到950℃。 The experiment of Co and Sm co-doped Pb_(0.95)Ba_(0.05)(Zn_(1/3)Nb_(2/3))_(0.2)(Zr_(0.52)Ti_(0.48))_(0.8)O_(3)+0.6mol%Co_(2)O_(3)+0.04 mol%Sm_(2)O_(3)ternary piezoelectric ceramics were successfully prepared by traditional solid-state method.The piezoelectric properties,dielectric properties,phase composition and microstructure of PZN-PZT piezoelectric ceramic materials at different firing temperatures were studied and analyzed.The results show co-doping with Co and Sm not only improves the piezoelectric and dielectric properties of PZN-PZT:d_(33)=301 pC/N,K_(p)=0.72,ε_(r)=1486.46,tanδ=0.11%,Q_(m)=515,but also lowers the firing temperature of the material to 950℃.
作者 谢义磊 石棋 胡学兵 何中睿 洪顺球 XIE Yilei;SHI Qi;HU Xuebing;HE Zhongrui;HONG Shunqiu(Jingdezhen Ceramic University,Jingdezhen 333403,China;Jingdezhen Xinhuikang Electronics Co.,Ltd.,Jingdezhen 333403,China)
出处 《中国陶瓷》 CAS CSCD 北大核心 2023年第8期30-34,共5页 China Ceramics
关键词 Co、Sm共掺杂 PZN-PZT压电陶瓷材料 低温烧结 压电性能 Co、Sm co-doping PZN-PZT piezoelectric ceramic material Low temperature sintering Piezoelectric properties
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