摘要
研究了添加Co2O3对0．85PZT-0．15PZN陶瓷的压电和介电性能的影响．研究结果表明：随着Co2O3掺杂量从0增加到0．4％，介电损耗因子tanδ大幅降低，同时压电常数d33和介电常数εr降低．当添加质量分数为0．4％的Co2O3时，tanδ，d33,εr分别由未掺杂时的0．024，360pC／N，1100降低到0．003，220pC／N，600．当添加Co2O3超过0．4％时，d33,εr，tanδ的下降趋于平缓；当添加Co2O3超过0．7％时，陶瓷的漏电流增加，难以极化．实验发现，添加质量分数为0．4％的Co2O3比未掺杂陶瓷的烧成温度降低了近100℃，并且形成了晶粒尺度在1．0～2．5μm均匀致密的陶瓷．
The piezoelectric and dielectric properties of Co2O3 modified 0. 85PZT-0. 15PZN ceramics were investigated. The experimental results show that the piezoelectric charge constant （d33）, relative dielectric constant （εr） and dielectric dissipation loss factor （tanδ） decrease dramatically with increasing amount of dopedCo2O3 inarang from 0 to0.4 %. At 0.4 % additive of Co2O3, d33, εr and tanδ decrease from 360 pC/N, 1 100 and 0. 024 under undoped condition to 220 pC/N, 600 and 0. 003, respectively. However, further increasing amount of doped Co2O3 leads to decreasing d33, εr and tanδ slightly. The large leakage current creates in the ceramics with more than 0. 7 % addition of Co2O3 under poling, resulting in poling difficulty. Moreover, 0. 4 % Co2O3 doping in the ceramic reduces approximate 100 ℃ of sintering temperature compared to that of the undoped ceramic. The 0.4 % Co2O3 doped 0.85PZT-0. 15PZN compact ceramic with the gain size of 1.0-2.5 μm was obtained.
出处
《华中科技大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2007年第4期69-71,77,共4页
Journal of Huazhong University of Science and Technology(Natural Science Edition)
关键词
压电陶瓷
Co2O3掺杂
介电损耗因子
piezoelectric ceramics
Co2O3 doping
dielectric dissipation loss factor
