Integration Technology of Micro-LED for Next-Generation Display 被引量：4

导出

摘要 Inorganic micro light-emitting diodes(micro-LEDs)based on II-V compound semiconductors have been widely studied for self-emissive displays.From chips to applications,integration technology plays an indispensable role in micro-LED displays.

作者 Dingbo Chen Yu-Chang Chen Guang Zeng David WeiZhang Hong-Liang Lu

机构地区 State Key Laboratory of ASIC and System Jia Shan Fudan Institute Key Laboratory of Specialty Fiber Optics and Optical Access Networks

出处《Research》 SCIE EI CSCD 2023年第2期389-413,共25页 研究（英文）

基金 This work is supported by the National Natural Science Foundation of China(Nos.62027818,51861135105,61874034,and 11974320) the National Key R&D Program of China(No.2021YFB3202500) the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300)。

关键词 LED DIODES LEDS

分类号 TN31 [电子电信—物理电子学]

引文网络
相关文献

同被引文献13

1陈志忠,康香宁,陈伟华,席鑫,焦飞,王琦,张国义,沈波.高亮度Micro-LED外延和芯片制备[J].微纳电子与智能制造,2021,3(3):8-22. 被引量：2
2潘祚坚,陈志忠,焦飞,詹景麟,陈毅勇,陈怡帆,聂靖昕,赵彤阳,邓楚涵,康香宁,李顺峰,王琦,张国义,沈波.面向显示应用的微米发光二极管外延和芯片关键技术综述[J].物理学报,2020,69(19):324-347. 被引量：12
3Shengnan Zhang,Jianli Zhang,Jiangdong Gao,Xiaolan Wang,Changda Zheng,Meng Zhang,Xiaoming Wu,Longquan Xu,Jie Ding,Zhijue Quan,Fengyi Jiang.Efficient emission of InGaN-based light-emitting diodes:toward orange and red[J].Photonics Research,2020,8(11):1671-1675. 被引量：14
4Yue HAO,Shuiying XIANG,Genquan HAN,Jincheng ZHANG,Xiaohua MA,Zhangming ZHU,Xingxing GUO,Yahui ZHANG,Yanan HAN,Ziwei SONG,Yan LIU,Ling YANG,Hong ZHOU,Jiangyi SHI,Wei ZHANG,Min XU,Weisheng ZHAO,Biao PAN,Yangqi HUANG,Qi LIU,Yimao CAI,Jian ZHU,Xin OU,Tiangui YOU,Huaqiang WU,Bin GAO,Zhiyong ZHANG,Guoping GUO,Yonghua CHEN,Yong LIU,Xiangfei CHEN,Chunlai XUE,Xingjun WANG,Lixia ZHAO,Xihua ZOU,Lianshan YAN,Ming LI.Recent progress of integrated circuits and optoelectronic chips[J].Science China(Information Sciences),2021,64(10):99-131. 被引量：20
5Jianghao Xiong,En-Lin Hsiang,Ziqian He,Tao Zhan,Shin-Tson Wu.Augmented reality and virtual reality displays:emerging technologies and future perspectives[J].Light(Science & Applications),2021,10(11):2098-2127. 被引量：66
6ZHE ZHUANG,DAISUKE IIDA,KAZUHIRO OHKAWA.Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN[J].Photonics Research,2021,9(12):2429-2434. 被引量：1
7孙宁宁,杨彪,陈福荣,胡金龙,余海洋,卞敬,段永青,黄永安.激光辅助MicroLED巨量转移技术进展[J].中国科学：技术科学,2022,52(4):513-528. 被引量：8
8A.Pandey,Y.Malhotra,P.Wang,K.Sun,X.Liu,Z.Mi.N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs[J].Photonics Research,2022,10(4):1107-1116. 被引量：5
9Guiqiang Zhu,Yijing Liu,Rui Ming,Feng Shi,Mengjiao Cheng.Mass transfer,detection and repair technologies in micro-LED displays[J].Science China Materials,2022,65(8):2128-2153. 被引量：8
10周律,郑华,张声浩,李华丹,张耿,张绍强,许伟,许恒荣,肖俊林,宁洪龙.Micro-LED显示及其驱动技术的研究进展[J].液晶与显示,2022,37(11):1395-1410. 被引量：7

引证文献4

1周佳,闫金健,刘志强,江莹,包洋,黄凯,李金钗,周德云.Micro LED当前面临的瓶颈及技术进展[J].光电子技术,2023,43(2):91-113. 被引量：2
2苗宗成,张瑞寅,贺泽民,梁蓬霞.TFT基板低功耗显示驱动方法研究[J].液晶与显示,2023,38(10):1372-1388.
3Xu YANG,Jinchai LI,Xuhui PENG,Chunfeng ZHAO,Chao CHEN,Xiaowei ZHANG,Jinliang LIN,Donghua LI,Yuefen CHEN,Zhaoxia BI,Feng QIN,Cheng LI,Kai HUANG,Junyong KANG,Rong ZHANG.Super retina TFT based full color microLED display via laser mass transfer[J].Science China(Information Sciences),2024,67(11):1-15.
4郭成龙,王学燕,周毅坚,朱学奇,鄢支兵,杨天溪,李晋,李洋,孙捷,严群.3175 PPI AlGaInP基红光Micro-LED及其CMOS驱动背板的凸点制备与键合[J].科学通报,2024,69(32):4773-4782.

二级引证文献2

1罗晓雅.基于色转换层的Micro-LED全彩色显示专利分析[J].电视技术,2024,48(6):163-166.
2冯美权.基于Micro-LED技术的汽车照明和车载显示应用研究[J].时代汽车,2024(22):149-151.

1Di Liang,John E.Bowers.Recent Progress in Heterogeneous Ⅲ-Ⅴ-on-Silicon Photonic Integration[J].Light(Advanced Manufacturing),2021,2(1):51-75. 被引量：14
2余睿,盛喆,胡文楠,王越,董建国,孙浩然,程增光,张增星.A field-effect WSe_(2)/Si heterojunction diode[J].Chinese Physics B,2023,32(1):592-597.
3Genquan Han,Tiangui You,Yibo Wang,Zheng-Dong Luo,Xin Ou,Yue Hao.Heterogeneous integration technology for the thermal management of Ga_(2)O_(3) power devices[J].Journal of Semiconductors,2023,44(6):1-3.
4Yue Hao,Fengyi Jiang.Wide bandgap and ultra-wide bandgap semiconductors[J].Fundamental Research,2021,1(6):655-655.
5Tatsuya Nakazawa,Donghyun Kim,Jaehyeok Kim,Yohei Kotsugi,Taehoon Cheon,Seung-Min Chung,Soo-Hyun Kim,Hyungjun Kim.Development of RuS_(2) for near-infrared photodetector by atomic layer deposition and post-sulfurization[J].Rare Metals,2022,41(9):3086-3099. 被引量：4
6Fen Zhang,Yali Yu,Zhangxun Mo,Le Huang,Qinglin Xia,Bo Li,Mianzeng Zhong,Jun He.Alloying-engineered high-performance broadband polarized Bi_(1.3)In_(0.7)Se_(3)photodetector with ultrafast response[J].Nano Research,2022,15(9):8451-8457. 被引量：1
7Lixia Wang,Lingyu Zhao,Meirong Song,Lixia Xie,Xiaopeng Wang,Xin Li,Yanjie Huang,Min Wei,Qiu Jin,Xianglong Meng,Yang Zhao.Alternatingly stacked thin film electrodes-based compact aqueous hybrid electrochemical capacitors for hundred-volts AC line filtering[J].Journal of Energy Chemistry,2023(3):158-168.
8毕朝霞,Anders Gustafsson,Lars Samuelson.Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J].Chinese Physics B,2023,32(1):1-10.
9GONG Qian,WU Ju,XU Bo,LIANG Ji-ben,FAN Ti-wen,WANG Zhan-guo,BAI Yuan-qiang.Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs[J].Chinese Physics Letters,1998,15(7):519-521.
10Menglin Huang,Zhengneng Zheng,Zhenxing Dai,Xinjing Guo,Shanshan Wang,Lilai Jiang,Jinchen Wei,Shiyou Chen.DASP: Defect and Dopant ab-initio Simulation Package[J].Journal of Semiconductors,2022,43(4):82-95. 被引量：4

Research

2023年第2期

浏览历史

内容加载中请稍等...

Integration Technology of Micro-LED for Next-Generation Display 被引量：4

同被引文献13

引证文献4

二级引证文献2

相关作者

相关机构

相关主题

浏览历史