摘要
A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs islands are asymmetrical along the two<110>directions on the(001)growth plane.Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the Ⅲ-Ⅳ compound semiconductors.
基金
Supported by the National Natural Science Foundation of China under Grant No.69576026。
