摘要
The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized photodetectors.In this study,the crystal structure,optical and optoelectronic aniso-tropy of one kind of quasi-one-dimensional(1D)semiconductors,ZrSe_(3),are systematically investigated through experiments and theoretical studies.The ZrSe_(3)-based photodetector shows impressive wide spectral response from ultraviolet(UV)to near in-frared(NIR)and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^(-1) and detectivity of~106 at 532 nm.Moreover,the dichroic ratio of ZrSe_(3)-based polarized photodetector is around 1.1 at 808 nm.This study suggests that ZrSe_(3) has potential in optoelectronic applications and polarization detectors.
基金
financially supported by the National Key Research and Development Program of China (Grant No.2017YFA0207500)
the National Natural Science Foundation of China (Grant No. 62125404, 12004375, 62004193,62174155)
the CAS-JSPS Cooperative Research Project (No.GJHZ2021131)
the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43000000)
