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Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction 被引量:8

Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction
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摘要 Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures. Two-dimensional(2D) atomic crystals, such as graphene, black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices, due to their unique crystal structures and optical absorption properties.In this study, we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices. The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics, and the photoresponsivity reached 1.8 mA/W at 1550 nm. In addition, the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated, and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm. Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection, which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.
出处 《Journal of Semiconductors》 EI CAS CSCD 2019年第9期41-48,共8页 半导体学报(英文版)
基金 supported by the National Key R&D Program of China (Grant No. 2017YFA0303400 and No.2017YFB 0405700) supported by the NSFC Grant Nos. 61774144 and 11474272 sponsored by Chinese Academy of Sciences, grant No. QYZDY-SSW-JSC020, XDPB12, and XDB28000000
关键词 BROADBAND POLARIZED photodetection p-BP/n-ReS2 vdWs herterojunction BROADBAND vdWs HETEROJUNCTION broadband polarized photodetection p-BP/n-ReS2 vdWs herterojunction broadband vdWs heterojunction
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