摘要
目的为在高温工况下服役的含氢碳(a–C:H)薄膜的制备提供新思路。方法首先利用DP–PECVD和BiP–PECVD两种方法分别在Si基底上制备了两种本征结构不同的a–C:H薄膜,分别在350、450、550、650℃下进行退火处理。通过纳米硬度、X射线光电子能谱、傅里叶转变红外光谱、激光共聚焦拉曼光谱、场发射扫描电镜及CSM摩擦试验机等,分别评价了未退火和不同退火温度下两种不同结构a–C:H薄膜的结构、表面形貌、力学及摩擦学等性能。研究了不同本征结构a–C:H薄膜对退火行为的影响。结果DP–PECVD方法在制备a–C:H薄膜(A薄膜)的过程中具有更高的沉积速率,是BiP–PECVD法(B薄膜)的1.52倍。随着退火温度的增加,两种方法制备的a–C:H薄膜均发生H脱附,但是A薄膜的脱H转变点为450℃,B薄膜的脱H转变点为350℃。DP–PECVD法制备的a–C:H薄膜在H脱附过程中更容易形成sp^(3)–C,而BiP–PECVD法制备的a–C:H薄膜在此过程中形成sp^(3)–C和sp2–C杂化键的概率基本相同。BiP–PECVD法制备的a–C:H薄膜在退火过程中更容易失去H,且在450℃以上出现大面积剥离,摩擦失效。而DP–PECVD法制备的碳薄膜则表现出更好的热和摩擦学稳定性,在350~650℃均可保持薄膜的完整性,并且在350~550℃退火后保持低至约0.06的摩擦因数。结论DP–PECVD方法制备的a–C:H薄膜具有更好的热稳定性、力学稳定性及摩擦学稳定性。
Hydrogenated amorphous carbon(a-C:H)film was used in different field due to its excellent electrical,optical and tribological properties.With the evolution of the mechanic systems,the a-C:H film is required not only to have the performance of low friction coefficient,but also to meet the high temperature(≥350℃)service conditions.Thus,the thermal stability of the a-C:H film is the key point.The stability of a-C:H films is closely related to their inner structure,which depends on the preparation methods.So it is important to study the effects of different preparation methods on the nano structure of a-C:H films with variation of temperatures.The previous work mainly focused on the structural changes of specific a-C:H films at different annealing temperatures.However,there still lack of attention to the effect of film’s intrinsic structure on the annealing results.Thus,in this work,DC Pulsed Plasma Enhanced Chemical Vapor Deposition(PD-PECVD)and Bipolar Pulsed Plasma Enhanced Chemical Vapor Deposition(BiP-PECVD)were used to deposit two kinds of a-C:H films with different structures,then of which were annealed at 350℃,450℃,550℃and 650℃,respectively.The variation of structural,mechanical properties,surface morphology and tribological properties of two kinds of a-C:H films were evaluated by appropriate testing methods.The results show that the deposition rate of a-C:H films,deposited via PD-PECVD method is 1.52 times higher than that of the BiP-PECVD method.With the increase of the annealing temperature,the a-C:H films prepared by the two methods all desorbed H but the transitional temperature point of desorption of H at 450℃and 350℃,respectively.One can be also confirmed that the a-C:H film prepared by the PD-PECVD method is easier to form sp^(3)-C during the H desorption process,while the a-C:H film prepared by the BiP-PECVD method has the same probability of forming sp^(3)-C and sp2-C hybrid bonds.In addition,the a-C:H film,prepared by the BiP-PECVD method,is easier to lose H during the annealing p
作者
贾倩
张斌
赖振国
张俊彦
JIA Qian;ZHANG Bin;LAI Zhen-guo;ZHANG Jun-yan(Key Laboratory of Science and Technology on Wear and Protection of Materials,Lanzhou Institute of Chemical Physics,Chinese Academy of Sciences,Lanzhou 730000,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《表面技术》
EI
CAS
CSCD
北大核心
2022年第7期98-106,共9页
Surface Technology
基金
国家自然科学基金(U1737213)。
关键词
非晶含氢碳薄膜
退火
双极脉冲
直流脉冲
等离子体增强化学气相沉积
hydrogenated amorphous carbon film
annealing
bipolar pulse
DC pulse
plasma-enhanced chemical vapor deposition
