摘要
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device technology.The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN gate.Device reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also discussed.Lastly,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.
基金
This work was supported by the National Natural Science Foundation of China(Grants No.62174174,61775230,61804162,61874131,62074158,U1601210,61874114,61922001,11634002,61521004,and 61927806)
Guangdong Province Key-Area Research and Development Program(Grants No.2019B010130001,2019B090917005,2019B090904002,2019B090909004,2020B010174003,and 2020B010174004)
the National Key Research and Development Program of China(Grants No.2016YFB0400100 and 2017YFB0402800)
the Science Challenge Project(Grant No.TZ2018003).
