摘要
氮化镓(GaN)作为第三代半导体材料的代表,具有优异的材料物理特性,更加适合于下一代电力电子系统对功率开关器件更大功率、更高频率、更小体积和更恶劣工作温度的要求。为了兼容Si基CMOS工艺流程,以及考虑到大尺寸、低成本等优势,在Si衬底上进行GaN材料的异质外延及器件制备已经成为业界主要技术路线。详细介绍了在6英寸Si衬底上外延生长的AlGaN/GaN HEMT结构功率电子材料,以及基于6英寸CMOS产线制造Si基GaN功率MIS-HEMT和常关型Cascode GaN器件的相关成果。
As a representative of the third-generation semiconductor materials, GaN has several excellent material and physical properties, which make it promising to meet the requirements of the next-generation power electronic system for power switching devices, such as higher power, higher frequency, smaller size, and extreme operating temperature. To be compatible with the CMOS process and with the consideration of advantages including large size and low cost, the hetero-epitaxy of GaN on Si substrate and the device fabrication have become the main technical route in industrial circles. In this study, the achievements in manufacturing AlGaN/GaN HEMT epi-structure power electronic materials on 6-inch Si substrate and the Si-based GaN power MIS-HEMT on the 6-inch CMOS production line, as well as the research progress in normally-off Cascode GaN devices, are introduced in detail.
作者
何亮
张晓荣
倪毅强
罗睿宏
李柳暗
陈建国
张佰君
刘扬
HE Liang;ZHANG Xiaorong;NI Yiqiang;LUO Ruihong;LI Liuan;CHEN Jianguo;ZHANG Baijun;LIU Yang(School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510275,China;Jiangsu Sinopower Semiconductor Co.,Ltd,Suzhou 215215,China;Shenzhen Founder Microelectronics International Co.,Ltd,Shenzhen 518116,China)
出处
《电源学报》
CSCD
北大核心
2019年第3期26-37,共12页
Journal of Power Supply
基金
国家重点研发计划资助项目(2016YFB0400202)
国家自然科学基金-广东省联合基金资助项目(U1601210)
广东省科技计划资助项目(2017B010112002,2015B010132007)
广东省重点领域研发计划资助项目(2019B010128002)
广东省自然科学基金团队资助项目(2015A030312011)
中央高校基本科研业务费资助项目(20187612031610010)
珠海市宽禁带半导体电力电子技术重点实验室资助项目(20167612042080001)~~
