摘要
重点探究了直径200 mm超厚层硅片滑移线的影响因素以及控制方法。使用平板硅外延炉加工超厚层外延片,并使用颗粒测试仪SP1和光学干涉显微镜表征滑移线。从热应力是滑移线的主要成因出发,通过对衬底和基座背面凹槽的设计以及升温曲线的控制这三个方面改善了滑移线。结果表明,随着衬底倒角背面幅长和基座背面凹槽深度的增加,外延片的滑移线长度均呈现先减小后增大的趋势。衬底倒角最佳背面幅长为500μm,基座背面凹槽的最佳深度为0.80 mm。同时,在873 K下恒温3 min的升温工艺可以减少厚层硅外延片的滑移线。
The influencing factors and control methods of slip lines of the ultra-thick layer silicon wafer with a diameter of 200 mm were studied in detail.Ultra-thick layer epitaxial wafers were processed in a horizontal silicon epitaxial reactor,and the slip lines were characterized by particle tester SP1 and optical interference microscope.Based on the fact that thermal stress is the main cause of slip lines,the slip lines were improved from the designs of the substrate and groove on the back of the susceptor,and the control of the temperature rise curve.The results show that with the increases of the back width of the substrate chamfer and the groove depth on the back of the susceptor,the slip lines length of the epitaxial wafer decreases first and then increases.The optimum back width of the substrate chamfer is 500μm,and the optimum depth of the groove on the back of the susceptor is 0.80 mm.At the same time,the temperature rise process at 873 K for 3 min can reduce the slip lines of the ultra-thick layer silicon epitaxial wafer.
作者
袁肇耿
刘永超
张未涛
高国智
赵叶军
Yuan Zhaogeng;Liu Yongchao;Zhang Weitao;Gao Guozhi;Zhao Yejun(Hebei Poshing Electronics Technology Co.,Ltd.,Shijiazhuang 050200,China)
出处
《半导体技术》
CAS
北大核心
2022年第2期122-125,151,共5页
Semiconductor Technology
关键词
高压IGBT
外延
滑移线
平板硅外延炉
凹槽深度
high voltage IGBT
epitaxy
slip line
horizontal silicon epitaxial reactor
groove depth
