摘要
精准的温度控制是IC外延的关键,基于8英寸离子注入片,对影响单片外延炉温度的关键因素进行了研究。实验结果表明改变OFFSET参数,外延炉边缘温度随△T同步变化,中心和R/2处温度没有影响;中心热电偶安装位置每降低254μm,外延炉温度整体升高10℃;异常PID参数设置导致的升温曲线过冲,影响外延炉实际温度。实验数据量化了相关参数与外延炉温度变化的对应关系,为IC外延产品的温度管控提供了依据,提升了单片硅外延平台的标准化和产业化水平。
Accurate temperature control is the key to IC epitaxy. Based on the 8-inch ion implanted wafer, the key factors affecting the temperature of single wafer epitaxial equipment were investigated. The experimental results indicated that the temperature at edge changed with △T by changing OFFSET parameter. However, the temperature at center and R/2 were not affected. When the central thermocouple installation position reduced 254μm, the temperature of epitaxial equipment would increase 10℃. The overshoot of temperature curve, caused by the abnormal PID parameter setting, affected the actual temperature of the epitaxial equipment. The experimental data quantified the corresponding relationship between related factors and temperature of epitaxial equipment, provided the basis for temperature control of IC epitaxial products, and improved the construction level of single silicon wafer epitaxial standardization and industrialization platform.
作者
肖健
任凯
袁夫通
徐卫东
XIAO Jian;REN Kai;YUAN Futong;XU Weidong(Nanjing Guosheng Electronic CO.,LTD., Nanjing 211111, China)
出处
《电子与封装》
2019年第5期41-44,共4页
Electronics & Packaging
