摘要
具有高功率及高亮度激光特性的锥形半导体激光器在激光加工、自由空间通信、医疗等领域具有广泛的应用前景。本文基于广角差分光束传播法(WA-FD-BPM),对980 nm锥形半导体激光器进行了仿真模拟,详细分析了不同结构参数(脊形区刻蚀深度、锥形角度、不同脊形区/锥形区长度比、锥形区刻蚀深度、前腔面反射率)对器件光束质量和P-I-V特性的影响。分析认为,锥形区波导的几何损耗是导致器件斜率效率降低的主要因素,光泵浦效应是影响锥形激光器光束质量变差的重要因素,可通过降低器件的前腔面反射率来改善光束质量。研究结果可为锥形激光器的性能优化提供参考。
Tapered semiconductor lasers with high power and high brightness characteristics have been extensively used in many fields such as laser processing,free space communications,and medical etc.A simulation on 980 nm tapered semiconductor lasers has been done based on the wide-angle differential beam propagation method(WA-FD-BPM)in this work.The effects of structural parameters(such as ridge etching depth,taper angle,different ridge/taper length ratio,taper etching depth,front cavity reflectance)on the beam quality and P-I-V characteristics of the device are analyzed in detail.The analysis shows that the geometric loss of the tapered waveguide is the main factor leading to the decrease of the slope efficiency of the device,and the optical pumping effect is an important factor affecting the deterioration of the beam quality.The beam quality can be improved by reducing the reflectivity of the front cavity surface of the device.The results in this paper can provide a certain theoretical reference for the design and analysis of tapered lasers.
作者
王芝浩
王警辉
刘帅男
张悦
苏鹏
高欣
薄报学
WANG Zhi-hao;WANG Jing-hui;LIU Shuai-nan;ZHANG Yue;SU Peng;GAO Xin;BO Bao-xue(State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2022年第2期275-284,共10页
Chinese Journal of Luminescence
基金
国家自然科学基金(61774024)
吉林省科技发展计划(20190302007GX,20200501008GS)资助项目。
关键词
锥形半导体激光器
广角差分光束传播法
光束质量
光场分布
tapered semiconductor laser
wide-angle differential beam propagation
beam quality
optical field distribution
