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Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution 被引量:2

Suppression of far-field blooming in high-power broad-area diode lasers by optimizing gain distribution
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摘要 Far-field blooming, a serious far-field dependence on driving current, affects the stability of beam quality and applications of broad-area(BA) diode lasers. In this Letter, the lateral ridge waveguide(LRW) is introduced to BA lasers by a simple and cost-effective approach to control the far-field stability and beam divergence. The influences of LRW length on output power, near-and far-field, are investigated and it is found that the optimized LRW length is able to improve both the far-field blooming and output power. The mechanism behind this is analyzed and a 0.13°/A dependence of lateral divergence angle on the injection current is achieved. Far-field blooming, a serious far-field dependence on driving current, affects the stability of beam quality and applications of broad-area(BA) diode lasers. In this Letter, the lateral ridge waveguide(LRW) is introduced to BA lasers by a simple and cost-effective approach to control the far-field stability and beam divergence. The influences of LRW length on output power, near-and far-field, are investigated and it is found that the optimized LRW length is able to improve both the far-field blooming and output power. The mechanism behind this is analyzed and a 0.13°/A dependence of lateral divergence angle on the injection current is achieved.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2017年第7期60-63,共4页 中国光学快报(英文版)
基金 supported by the National Natural Science Foundation of China(Nos.61404138 and 61474119) the National Basic Research Program of China(No.2013CB933303) the International Science Technology Cooperation Program of China(No.2013DFR00730) the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(No.IOSKL2016KF15)
关键词 divergence waveguide Suppression behind length optimizing Far etching pumping affects divergence waveguide Suppression behind length optimizing Far etching pumping affects
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