摘要
976 nm高功率半导体激光芯片是光纤激光器的核心部件,具有极为重要的产业价值。报道了课题组在高效率高功率半导体激光芯片的设计、制作与测试方面的研究成果。为了最大限度地提高器件的功率转换效率,同时满足苛刻的寿命要求,在设计上采用双非对称大光腔波导结构,同时对量子阱结构、波导结构、掺杂以及器件结构进行了优化;在外延生长方面,系统地优化了生长工艺参数,确保了外延材料具有极高的内量子效率及低内损耗。大量测试表明:所制作的器件(腔长为5 mm、发光条宽为200μm的芯片)在室温、连续波(CW)测试条件下,阈值电流约为1 A,斜率效率为1.14 W/A;当电流为9 A时,最高功率转换效率高达72.4%;当电流为30 A时,输出功率达到29.4 W,功率转换效率为61.3%;对应于95%光场能量的水平远场发散角低至8.7°。上述参数性能已经达到了国际同类产品的先进水平。
Objective High-power semiconductor laser diodes emitting at approximately 976 nm are in high demand in Yb-doped fiber lasers(YDFL)because YDFLs exhibit strong absorption peaks at approximately 976 nm.Specifically,the absorption cross section is as strong as three times that at a wavelength of approximately 915 nm.Thus,by using lasers with an emission wavelength of approximately 976 nm for optical pumping,the length of the active fiber can be significantly shortened,leading to cost savings and reduced nonlinear effects.With the ongoing advancements in various industrial applications,the emitting power of high-power lasers increases from 12 W(about 10 years ago)to approximately 30 W.Beyond the high-power requirement,one of the most sought-after features of high-power lasers is their power conversion efficiency(PCE).A superior PCE results in higher optical power emission,enhanced reliability,and reduced system costs.In this study,we demonstrate the design and fabrication of high-efficiency,high-power 976-nm lasers.The tests on our fabricated devices show that,at room temperature and under the continuous-wave(CW)operation condition,the power conversion efficiency(PCE)reaches as high as 72.4%when the injection current is 10 A.However,the efficiency decreases to 61.3%when the current rises to 30 A,at which the operating power is 29.4 W.Methods The epitaxy material is grown using the metal-organic chemical vapor deposition(MOCVD)method,and the structure contains an 8-nm-thick In0.175GaAs single quantum well(SQW)sandwiched between two separate confinement heterostructure(SCH)Al0.17GaAs layers.A wide optical cavity waveguide design is employed to reduce power density and cavity loss.The total thickness of the SCH layers is 1.5μm.N-and P-doping are optimized to ensure the lasers produce the highest PCE when the emitting power is 25 W.Figure 1 shows the refractive index profile of our material structure,and Table 1 lists the detailed material structure.After designing the material structure,we proceed with the optimization
作者
付鹏
张艳春
赵涛
赵勇明
唐松
李颖
韩沈丹
Fu Peng;Zhang Yanchun;Zhao Tao;Zhao Yongming;Tang Song;Li Ying;Han Shendan(Guangdong Advanced Technology Institute Co.,Ltd.,Guangzhou 510535,Guangdong,China;Dogain Optoelectronic Technology(Suzhou)Co.,Ltd.,Suzhou 215124,Jiangsu,China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2024年第7期211-216,共6页
Chinese Journal of Lasers
基金
广东省重点领域研发计划(2020B090922005)。
关键词
激光器
半导体激光芯片
高功率转换效率
高功率
低水平远场发散角
976
nm
lasers
semiconductor laser chips
high electro-optical conversion efficiency
high power
low level far-field divergence angle
976 nm
