摘要
基于130 nm RF CMOS工艺,提出了一种可实现上/下双向变频功能的K波段有源混频器。当收发机工作于接收模式时,双向混频器执行下变频功能,将低噪放大器放大后的射频信号转换为中频信号;当收发机工作于发射模式时,双向混频器则实现上变频功能,将输入的基带信号转换为射频信号并输出至功率放大器。后仿真结果表明,在0 dBm的本振驱动下,混频器工作于上变频模式时的转换增益、噪声系数、输出1 dB压缩点在23~25 GHz范围内分别为-1.1~-0.4 dB、12.9~3.3 dB、-8.2 dBm@24 GHz;工作于下变频工作模式时的转换增益、噪声系数、输入1 dB压缩点在23~25 GHz范围内分别为2.4~3.4 dB、15.2~15.6 dB、-3.6 dBm@24 GHz。混频器芯片面积为0.6 mm;在1.5 V供电电压下,消耗功率12 mW。
An active bidirectional mixer performing the up/down conversion is proposed at K-band with a 130 nm CMOS in this paper.The mixer performs the down conversion in the Rx mode and converts the radio frequency(RF)signal amplified by low noise amplifier(LNA)into the intermediate frequency(IF)signal,whereas carries out the up conversion in the Tx mode and shifts the baseband(BB)signal up to the RF signal for the power amplifier(PA).Post-simulation results shows that with 0 dBm local oscillator(LO)drives,the mixer achieves the conversion gain(CG),noise figure(NF),and output 1 dB compression point(OP1 dB)of-1.1~-0.4 dB,12.9~13.3 dB from 23 to 25 GHz,and-8.2 dBm@24 GHz in up-conversion mode,respectively.In down-conversion mode,the mixer exhibits the CG,NF,and iutput 1 dB compression point(IP1dB)of 2.4~3.4 dB,15.2~15.6 dB from 23 to 25 GHz,and-3.6 dBm@24 GHz,respectively.The chip area is 0.6 mm;,which consumes 12 mW from a supply of 1.5 V.
作者
赵玉楠
潘俊仁
彭尧
何进
王豪
常胜
黄启俊
Zhao Yunan;Pan Junren;Peng Yao;He Jin;Wang Hao;Chang Sheng;Huang Qijun(School of Physics and Technology,Wuhan University,Wuhan 430072,China)
出处
《电子技术应用》
2022年第1期94-99,共6页
Application of Electronic Technique
基金
国家自然科学基金(61774113,61874079,62074116,81971702)。
