摘要
基于130nm SiGe BiCMOS工艺,本文采用双吉尔伯特单元结构设计了一款高线性度的下变频混频器。在混频器的跨导级加入退化电感提高混频器的线性度,并且在中频输出端使用有源双转单电路,实现单端输出并提供增益。版图仿真结果表明,在本振功率为4dBm时,转换增益为4.89dB,噪声系数为15.44dB,在本振信号为90G,射频信号为91G时,输入1dB压缩点P1dB为-0.02dBm,在3.3V的工作电压下,工作电流为14.1mA,功耗为46.53mW。
Based on 130nm SiGe BiCMOS technology,a high-linearity downconversion mixer is designed by the Gilbert cell structure.A degenerate inductor is adding to the transconductance stage of the mixer to improve the linearity of the mixer,and an active balun circuit is used to achieve a single-ended output and gain.The layout simulation results show that when the LO power is 4dBm,the conversion gain is 4.89dB,the noise figure is 15.44dB.When the LO frequency is 90G and the RF frequency is 91G,the input 1dB compression point P1dB is-0.02dBm,and the working current is 14.1mA.The power consumption is 46.53mW at 3.3V working voltage.
作者
陈翔
周春霞
程国枭
吴文
CHEN Xiang;ZHOU Chun-xia;CHENG Guo-xiao;WU Wen(Key Laboratory of Near-Range RF Sensing ICs&Microsystems(NJUST),Ministry of Education,School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China)
出处
《微波学报》
CSCD
北大核心
2023年第S01期382-385,共4页
Journal of Microwaves
