摘要
采用0.13μm SiGe BiCMOS工艺设计了一款高集成度的六位宽带有源矢量合成移相器,该有源矢量合成移相器采用定制设计的超宽带无源巴伦和RLC正交网络,产生宽带的正交信号,保证幅度和相位平衡性。采用双平衡吉尔伯特结构的矢量合成加法器对四路正交信号合成,其输入级偏置通过超宽带无源巴伦中心抽头提供,吉尔伯特结构开关级用作I、Q极性控制,尾电流源用作I/Q比值控制。通过数字译码电路和电流型数模转换电路控制对应移相位的I、Q极性和I/Q比值。采用双极型有源电感用作吉尔伯特结构的负载,最后合成的输出差分信号经过有源巴伦输出。测试结果表明,研制的有源矢量合成移相器芯片3 dB带宽为7~15 GHz,插损为14 dB,在8~16 GHz频率范围内寄生调幅小于±0.5 dB,输入1 dB功率压缩点为5 dBm,在9~15 GHz频率范围移相精度小于3°,电源电压为3.3 V,电流小于10 mA。包含测试焊盘,芯片尺寸为0.6 mm×0.9 mm,面积为传统同频段无源移相器的四分之一。
A highly integrated 6 bit ultra-wideband active vector sum phase shifter was presented by using 0.13 μm SiGe BiCMOS process. Well^(-)designed broadband passive Balun and RLC quadrature network were used to generate orthogonal signals with amplitude and phase consistency. The vector adder with double balanced Gilbert structure was used to synthesize four orthogonal signals. The input stage of Gilbert structure was provided by the center tap of the passive Balun,the switch stage controlled the I/Q polarity,and the tail current source controlled the I/Q ratio. Then I/Q polarity and I/Q ratio of corresponding phase shift were controlled by digital decoding circuits and current-mode DAC. Bipolar active inductor acted as the load stage of Gilbert structure and the synthesized differential output signal passed through the active Balun. Test results show that the VM phase shifter has a3 dB bandwidth of 7~15 GHz frequency range,14 dB insertion loss,less than ±0.5 dB amplitude imbalance in 8~16 GHz frequency range,5 dBm input 1 dB compression point and less than 3 degree RMS phase error in 9~15 GHz frequency range. The current consumption is 10 mA under supply voltage of 3.3 V. The chip occupies an area of 0.6 mm×0.9 mm with test pads,which is only quarter of the area of traditional passive phase shifters.
作者
浦鈺钤
沈宏昌
童伟
PU Yuqian;SHEN Hongchang;TONG Wei(Nanjing Guobo Electronics Co.,Ltd.,Nangjingy 210016,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2021年第4期268-273,共6页
Research & Progress of SSE
