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制备工艺对薄介质MLCC介电强度的影响 被引量:5

Influence of Processes on Dielectric Strength of Thin Dielectric MLCCs
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摘要 为了满足电子设备对高容量高耐电压多层陶瓷电容器(MLCC)的要求,采用温度补偿型介质瓷粉匹配镍内电极浆料制备薄介质MLCC。研究了预烧工艺和生倒工艺对薄介质MLCC的介电强度的影响。结果发现:预烧可以减少生坯芯片中的残留碳,从而改善介质致密性和电极连续性,有效提高薄介质MLCC的介电强度。设置合适的加湿气氛和预烧温度,才能将残留碳量降低到符合要求的范围。生倒将生坯芯片的圆角半径控制为105~143μm,可以防止陶瓷芯片损伤和镀液渗入,提高薄介质MLCC的击穿电压值。 In order to meet the requirements of electronic equipment for high capacitance and high withstanding voltage multilayer ceramic capacitors,thin dielectric MLCC is prepared by temperature compensating type dielectric ceramic powder and Ni inner electrode paste.The influence of presintering process and green chip chamfering process on the dielectric strength of thin dielectric MLCC are studied.The results show that presintering can reduce carbon residue amount in green chips,thus dielectric density and electrodes continuity are improved and the dielectric strength of thin dielectric MLCCs can be effectively enhanced.Carbon residue amount can only be reduced to satisfactory range by setting proper atmosphere and presintering temperature.Controlling corner radius of green chips to 105~143μm after green chip chamfering can prevent ceramic chips being damaged and plating solution from penetrating,can enhance breakdown voltage of thin dielectric MLCCs.
作者 陆亨 LU Heng(State Key Laboratory of Advanced Materials and Electronic Components,Fenghua Advanced Technology Co.,Ltd.,Zhaoqing 526020,China)
出处 《电子工艺技术》 2022年第1期26-28,35,共4页 Electronics Process Technology
基金 国家工信部工业强基工程建设项目(0714-EMTC-02-00869/分包号:2)。
关键词 多层陶瓷电容器 薄介质 介电强度 击穿电压 预烧 碳残留 生倒 dispensing and bonding high precision picking and placing multi-axis cooperative motion control system
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