摘要
当全耗尽的DSOI NMOS器件受到高总剂量辐射或高背栅电压的影响时,器件阈值电压与背栅电压的关系不再满足单一的线性关系。器件阈值电压与背栅电压之间的耦合机制会在背栅界面从耗尽型过度到强反型后改变,已有的模型不足以描述改变后的耦合机制。为解决这一问题,本文提出了一种考虑背栅电流影响的阈值电压模型。使用此模型,针对DSOI NMOS器件在受到高总剂量辐射或高背栅电压条件下器件阈值电压与背栅电压的耦合关系,可获得良好的拟合结果。
The relationship between the threshold voltage and the back-gate voltage of fully depleted DSOI NMOS is no longer satisfied with a single linear relationship after high total dose irradiation or high back-gate voltage.The coupling mechanism between the threshold voltage and the back-gate voltage will change after the back surface of the fully depleted DSOI device changes from the depletion region to the reversion region.Previous model is not enough to describe this phenomenon.In order to solve this problem,a new threshold voltage model was proposed considering the influence of back-gate current.The coupling relationship between the threshold voltage and back-gate voltage of the devices suffered from a high back-gate voltage or high total dose irradiation can be well fitted.
作者
王可为
卜建辉
韩郑生
李博
黄杨
罗家俊
赵发展
WANG Kewei;BU Jianhui;HAN Zhengsheng;LI Bo;HUANG Yang;LUO Jiajun;ZHAO Fazhan(Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Device,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100029,China)
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2021年第12期2224-2230,共7页
Atomic Energy Science and Technology
基金
Supported by Youth Innovation Promotion Association CAS(2020119)
National Natural Science Foundation of China(61874135,62011530040)。
